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Numéro de référence | PBSS9110D | ||
Description | PNP transistor | ||
Fabricant | NXP Semiconductors | ||
Logo | |||
1 Page
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 — 22 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS8110D.
1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO collector-emitter voltage
IC collector current
ICM peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = −1 A;
IB = −100 mA
Min Typ Max
Unit
- - −100 V
- - −1 A
- - −3 A
[1] -
170 320
mΩ
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Pages | Pages 13 | ||
Télécharger | [ PBSS9110D ] |
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