|
|
PDF NP80N06ELD Data sheet ( Hoja de datos )
| Número de pieza | NP80N06ELD | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NP80N06ELD (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
PRELIMINARY PRODUCT INFORMATION
MOS FIELD EFFECT TRANSISTOR
NP80N06CLD,NP80N06DLD,NP80N06ELD
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Channel Temperature 175 degree rated
• Super Low On-state Resistance
RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A)
RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A)
• Low Ciss : Ciss = 2360 pF (TYP.)
• Built-in Gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP80N06CLD
TO-220AB
NP80N06DLD
TO-262
NP80N06ELD
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
Gate to Source Voltage
VGSS
±20
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±80
±210
Total Power Dissipation (TA = 25 °C)
PT
1.8
Total Power Dissipation (Tch = 25 °C)
PT
100
Single Avalanche Current
Single Avalanche Energy Note2
IAS TBD
EAS TBD
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to + 175
V
V
A
A
W
W
A
mJ
°C
°C
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V →0
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C) 1.50 °C/W
Rth(ch-A) 83.3 °C/W
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information contained in this document is being issued in advance of the production cycle for the
device. The parameters for the device may change before final production or NEC Corporation, at its own
discretion, may withdraw the device prior to its production.
Document No. D13793EJ2V0PM00 (2nd edition)
Date Published January 1999 NS CP(K)
Printed in Japan
©
1998
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet NP80N06ELD.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NP80N06ELD | N-CHANNEL POWER MOS FET | Renesas |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |