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Numéro de référence | KTD1624 | ||
Description | EPITAXIAL PLANAR NPN TRANSISTOR | ||
Fabricant | KEC | ||
Logo | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTB1124.
KTD1624
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pulse)
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PC*
Tj
60
50
6
3
6
600
500
1
150
Storage Temperature Range
Tstg -55 150
* : Package mounted on ceramic substrate(250mm2 0.8t)
UNIT
V
V
V
A
A
mA
mW
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
ICBO
VCB=40V, IE=0
IEBO VEB=4V, IC=0
hFE(1) (Note) VCE=2V, IC=100
hFE (2)
VCE=2V, IC=3A
VCE(sat)
IC=2A, IB=100
VBE(sat)
IC=2A, IB=100
fT VCE=10V, IC=50
Cob VCB=10V, f=1 , IE=0
Turn-on Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
Note : hFE (1) Classification A:100 200, B:140 280, C:200 400
2008. 3. 11
Revision No : 5
MIN.
-
-
100
35
-
-
-
-
TYP.
-
-
-
-
0.19
0.94
150
25
MAX. UNIT.
1
1
400
-
0.5 V
1.2 V
-
-
- 70 -
- 650 -
nS
- 35 -
1/3
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Pages | Pages 3 | ||
Télécharger | [ KTD1624 ] |
No | Description détaillée | Fabricant |
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