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PDF KTD1003 Data sheet ( Hoja de datos )
| Número de pieza | KTD1003 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
ᴌHigh DC Current Gain
: hFE=800ᴕ3200. (VCE=5.0V, IC=300mA).
ᴌWide Area of Safe Operation.
ᴌLow Collector Saturation Voltage
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
50
Emitter-Base Voltage
VEBO
8
Collector Current
IC 1.0
Collector Power Dissipation
PC 500
PC * 1
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55ᴕ150
PC* : KTD1003 Mounted on Ceramic Substrate (250mm2x0.8t)
UNIT
V
V
V
A
mW
W
ᴱ
ᴱ
KTD1003
EPITAXIAL PLANAR NPN TRANSISTOR
AC
H
G
DD
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
hFE Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
ICBO
IEBO
hFE(1) Note
hFE(2)
VCE(sat)
VBE(sat)
Cob
fT
VCB=60V, IE=0
VEB=8V, IC=0
VCE=5.0V, IC=300mA
VCE=5.0V, IC=1.0A
IC=500mA, IB=5.0mA
IC=500mA, IB=5.0mA
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=500mA, f=100MHz
Base-Emitter Voltage
VBE VCE=5V, IC=100mA
Note : hFE Classification A:800ᴕ1600, B:1200ᴕ2400, C:2000ᴕ3200
2001. 3. 22
Revision No : 4
MIN.
-
-
800
400
-
-
-
150
-
TYP.
-
-
1500
-
0.17
0.80
18
250
630
MAX.
100
100
3200
-
0.30
1.2
30
-
700
UNIT
nA
nA
V
V
pF
MHz
mV
1/2
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