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PDF IRF8252TRPBF-1 Data sheet ( Hoja de datos )
| Número de pieza | IRF8252TRPBF-1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
25 V
2.7 mΩ
35 nC
25 A
IRF8252TRPbF-1
HEXFET® Power MOSFET
S1
AA
8D
S2
7D
S3
6D
G4
5D
Top View
SO-8
Applications
l Synchronous MOSFET for Notebook Processor Power
l Synchronous Rectifier MOSFET for Isolated DC-DC Converters
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF8252PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF8252TRPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
25
±20
25
20
200
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes through
are on page 10
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 16, 2014
1 page  
IRF8252TRPbF-1
30
25
20
15
10
5
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
2.5
2.0 ID = 250μA
ID = 100μA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
1E-006
1E-005
Ri (°C/W) τi (sec)
0.02127 0.000002
0.02040 0.000006
0.21216 0.000082
0.79696 0.001560
R1R1
R2R2
R3R3
R4R 4
R5R5
R 6R6
R7R7
R8R8
6.31529 0.028913
τJ
τJ
τ1
τ1
τ2
τ2
τ3
τ3
τ4
τ4
τ5
τ5
τ6
τ6
τ7
τ7
τA
τA
0.45152
0.006475
26.2230 1.208856
Ci= τi/Ri
Ci= τi/Ri
16.5590 45.68988
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10 100 1000
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 16, 2014
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF8252TRPBF-1.PDF ] | |
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