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IRF7910PBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF7910PBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7910PBF fiche technique
PD - 95336A
IRF7910PbF
Applications
l High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters for
Netcom and Computing Applications
l Power Management for Netcom,
Computing and Portable Applications
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
VDSS
12V
HEXFET® Power MOSFET
RDS(on) max
15m@VGS = 4.5V
ID
10A
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Maximum Power Dissipation„
Maximum Power Dissipation„
Linear Derating Factor
Junction and Storage Temperature Range
Max.
12
± 12
10
7.9
79
2.0
1.3
16
-55 to + 150
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
Parameter
RθJL
RθJA
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through „ are on page 8
www.irf.com
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
1
07/21/08

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