|
|
Numéro de référence | IRF7907TRPBF-1 | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
VDS
RDS(on) m ax Q1
(@VGS = 10V)
RDS(on) m ax Q2
(@VGS = 10V)
Qg (typical) Q1
Qg (typical) Q2
ID(@TA = 25°C)Q1
ID(@TA = 25°C)Q2
30 V
16.4
mΩ
11.8
6.7
14
nC
9.1
A
11
S2 1
G2 2
S1 3
G1 4
IRF7907TRPbF-1
HEXFET® Power MOSFET
8 D2
7 D2
6 D1
5 D1
SO-8
Applications
l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game
Consoles and Set-Top Box
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7907PbF-1
Package Type
SO-8
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRF7907TRPbF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Q1 Max.
Q2 Max.
30
± 20
9.1 11
7.3 8.8
76 85
2.0 2.0
1.3 1.3
0.016
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Q1 Max.
42
62.5
Q2 Max.
42
62.5
Units
°C/W
Notes through
are on page 11.
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014
|
|||
Pages | Pages 11 | ||
Télécharger | [ IRF7907TRPBF-1 ] |
No | Description détaillée | Fabricant |
IRF7907TRPBF-1 | Power MOSFET ( Transistor ) | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |