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Numéro de référence | IRF7809AVPBF-1 | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
DEVICE CHARACTERISTICS
IRF7809AV
RDS(on)
QG
Qsw
Qoss
7.0mΩ
41nC
14nC
30nC
IRF7809AVPbF-1
HEXFET® Power MOSFET
SO-8
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF7809AVPbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7809AVPbF-1
IRF7809AVTRPbF-1
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
TA = 25°C
TL = 90°C
Power Dissipation
TA = 25°C
TL = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Symbol
VDS
VGS
ID
IDM
PD
TJ, TSTG
IS
ISM
RθJA
RθJL
IRF7809A V
30
±12
13.3
14.6
100
2.5
3.0
–55 to 150
2.5
50
Max.
50
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
June 23, 2014
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Pages | Pages 8 | ||
Télécharger | [ IRF7809AVPBF-1 ] |
No | Description détaillée | Fabricant |
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