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IRF7807VTRPBF-1 fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF7807VTRPBF-1
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7807VTRPBF-1 fiche technique
VDS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
30 V
25 mΩ
9.5 nC
8.3 A
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
IRF7807VTRPbF-1
HEXFET® Power MOSFET
S1
S2
S3
G4
A
8D
7D
6D
5D
Top View
SO-8
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7807VPbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7807VTRPbF-1
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
(VGS 4.5V)
™Pulsed Drain Current
TA = 25°C
TA = 70°C
Power Dissipation eÃÃÃÃÃÃÃ TA = 25°C
TA = 70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
™Pulsed Source Current
Thermal Resistance
Parameter
ehMaximum Junction-to-Ambient
hMaximum Junction-to-Lead
Symbol
VDS
VGS
ID
IDM
PD
TJ , TSTG
IS
ISM
Symbol
RθJA
RθJL
IRF7807V
30
±20
8.3
6.6
66
2.5
1.6
-55 to 150
2.5
66
Units
V
A
W
°C
A
Typ
Max
Units
––– 50
––– 20 °C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 16, 2014

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