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PDF IRF7606PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7606PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95245
IRF7606PbF
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
l Lead-Free
Description
S
S
S
G
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
HEXFET® Power MOSFET
1
8
A
D
2 7D
3 6D
4 5D
Top View
VDSS = -30V
RDS(on) = 0.09Ω
The new Micro8 package, with half the footprint area
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.1mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
-30 V
-3.6
-2.9 A
-29
1.8 W
1.1 W
14 mW/°C
VGS
VGSM
dv/dt
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt
± 20
30
-5.0
V
V
V/ns
TJ , TSTG
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 150
240 (1.6mm from case)
°C
Thermal Resistance
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
70 °C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
www.irf.com
1
5/13/04
1 page  
IRF7606PbF
1000
800
600
400
200
V
C
GS
iss
=
=
0V,
Cgs
f = 1MHz
+ Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
Ciss
Coss
Crss
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
20 I D = -2.7A
16
12
VDS = -24V
VDS = -15V
8
4
FOR TEST CIRCUIT
0
SEE FIGURE 9
A
0 5 10 15 20 25 30
Q G , Total Gate Charge (nC)
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF7606PBF.PDF ] | |
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