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PDF 2N6530 Data sheet ( Hoja de datos )
| Número de pieza | 2N6530 | |
| Descripción | NPN POWER TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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DATA SHEET
2N6530
2N6531
2N6532
2N6533
NPN POWER TRANSISTOR
TO-220 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power
applications requiring extremely high gain.
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCER
VCEV
VCEO
VEBO
IC
ICM
PD
TJ,Tstg
ΘJC
2N6530
80
80
80
80
2N6531 2N6532
100 100
100 100
100 100
100 100
5.0
8.0
15
65
2N6533
120
120
120
120
-65 to +150
1.92
UNITS
V
V
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N6530
2N6531
2N6532
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX MIN MAX
ICEO
VCE=Rated VCEO
1.0 1.0 1.0
ICEV
VCE=Rated VCEV,
0.5 0.5 0.5
VEB=1.5V
ICEV
VCE=Rated VCEV,
5.0 5.0 5.0
VEB=5.0V, TC=125°C
IEBO
VEB=5.0V
5.0 5.0 5.0
BVCER
IC=200mA, RBE=100Ω
80
100
100
BVCEO
IC=200mA
80 100 100
BVCEV
IC=200mA, VEB=1.5V
80
100
100
VCE(SAT)
IC=3.0A, IB=6.0mA
3.0
VCE(SAT)
IC=5.0A, IB=10mA
2.0
2.0
VCE(SAT)
IC=8.0A, IB=80mA
3.0 3.0 3.0
VBE(ON)
VCE=3.0V, IC=3.0A
2.8
VBE(ON)
VCE=3.0V, IC=5.0A
2.8
2.8
VBE(ON)
VCE=3.0V, IC=8.0A
4.5 4.5 4.5
2N6533
MIN MAX
1.0
0.5
5.0
5.0
120
120
120
2.0
3.0
2.8
4.5
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
(CONTINUED ON REVERSE SIDE)
R0
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N6530.PDF ] | |
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