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PDF 2N6036 Data sheet ( Hoja de datos )
| Número de pieza | 2N6036 | |
| Descripción | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
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2N6034 2N6035 2N6036 PNP
2N6037 2N6038 2N6039 NPN
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6034, 2N6037
series devices are complementary silicon Darlington
power transistors, manufactured by the epitaxial base
process, designed for general purpose amplifier and
switching applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJA
Thermal Resistance
ΘJC
2N6034 2N6035 2N6036
2N6037 2N6038 2N6039
40 60 80
40 60 80
5.0
4.0
8.0
100
40
1.5
-65 to +150
83.3
3.12
UNITS
V
V
V
A
A
mA
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEV
VCE=Rated VCEO, VBE=1.5V
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=125°C
ICEO
VCE=Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=100mA (2N6034, 2N6037)
40
BVCEO
IC=100mA (2N6035, 2N6038)
60
BVCEO
IC=100mA (2N6036, 2N6039)
80
VCE(SAT) IC=2.0A, IB=8.0mA
VCE(SAT) IC=4.0A, IB=40mA
VBE(SAT) IC=4.0A, IB=40mA
VBE(ON)
VCE=3.0V, IC=2.0A
hFE VCE=3.0V, IC=500mA
500
hFE VCE=3.0V, IC=2.0A
750
hFE VCE=3.0V, IC=4.0A
100
fT
VCE=10V, IC=750mA, f=1.0MHz
25
Cob VCB=10V, IE=0, f=100kHz (PNP)
Cob VCB=10V, IE=0, f=100kHz (NPN)
MAX
500
100
500
100
2.0
2.0
3.0
4.0
2.8
15K
200
100
UNITS
μA
μA
μA
μA
mA
V
V
V
V
V
V
V
MHz
pF
pF
R1 (12-March 2014)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6036.PDF ] | |
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