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Numéro de référence | KDS190 | ||
Description | SILICON EPITAXIAL PLANAR DIODE | ||
Fabricant | KEC | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : SOT-23.
Low Forward Voltag : VF=0.92V(Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=2.2pF(Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VRM
VR
IFM
IO
IFSM
PD
Tj
Tstg
RATING
85
80
300
100
2
150
150
-55 150
UNIT
V
V
mA
mA
A
mW
KDS190
SILICON EPITAXIAL PLANAR DIODE
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. CATHODE
2. NC
3. ANODE
3
21
SOT-23
Marking
E3Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
VF(1)
VF(2)
VF(3)
IR
CT
trr
TEST CONDITION
IF=1mA
IF=10mA
IF=100mA
VR=80V
VR=0, f=1MHz
IF=10mA
MIN.
-
-
-
-
-
-
TYP.
0.61
0.74
0.92
-
2.2
1.6
MAX.
-
-
1.20
0.5
4.0
4.0
UNIT
V
A
pF
nS
1998. 6. 15
Revision No : 1
1/1
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Pages | Pages 1 | ||
Télécharger | [ KDS190 ] |
No | Description détaillée | Fabricant |
KDS190 | SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING) | KEC(Korea Electronics) |
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KDS193 | SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING) | KEC(Korea Electronics) |
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