(PDF) SE2310 Datasheet - SOT-23 Plastic-Encapsulate MOSFETS

Número de pieza	SE2310
Descripción	SOT-23 Plastic-Encapsulate MOSFETS
Fabricantes	WILLAS
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No Preview Available ! WILLAS SOT-23 Plastic-Encapsulate MOSFETS SE2310 N-Channel MOSFET DESCRIPTION The SE2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURES  High power and current handing capability  Lead free product is acquired  Surface mount package APPLICATION  Battery Switch  DC/DC Converter MARKING: S10 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (note 1) Power Dissipation Thermal Resistance from Junction to Ambient (note 2) Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ TSTG Moisture Sensitivity Level 1 Value 60 ±20 3 10 0.35 357 150 -55~+150 Unit V V A A W ℃/W ℃ ℃ 2013-10 WILLAS ELECTRONIC CORP. 1 page

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PDF SE2310 Data sheet ( Hoja de datos )