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Numéro de référence | HFW10N60S | ||
Description | N-Channel MOSFET | ||
Fabricant | SemiHow | ||
Logo | |||
May 2010
HFW10N60S
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ ȍ
ID = 9.5 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 29 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
D2-PAK
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ଇ)
– Continuous (TC = 100ଇ)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
9.5
5.7
38
ρ30
700
9.5
15.6
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25ଇ) *
Power Dissipation (TC = 25ଇ)
- Derate above 25ଇ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
3.13
156
1.25
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/ଇ
ଇ
ଇ
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.8
40
62.5
Units
ഒ:
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΪ͑ͣ͢͡͡
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Pages | Pages 7 | ||
Télécharger | [ HFW10N60S ] |
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