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PDF HMC284AMS8G Data sheet ( Hoja de datos )

Número de pieza HMC284AMS8G
Descripción SPDT Non-Reflective Switch
Fabricantes Hittite Microwave Corporation 
Logotipo Hittite Microwave Corporation Logotipo



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HMC284AMS8G / HMC284AMS8GE
v00.0612
SPDT Non-Reflective Switch
DC - 3.5 GHz
Typical Applications
The HMC284AMS8G / HMC284AMS8GE is ideal for:
• Cellular/PCS Base Stations
• 2.4 GHz ISM
• 3.5 GHz Wireless Local Loop
Features
High Isolation: >45 dB
Positive control: 0/+5V
Non-Reflective Design
Ultra Small Package: MSOP8G
Functional Diagram
General Description
The HMC284AMS8G & HMC284AMS8GE are low-
cost SPDT switches in 8-lead grounded base MSOP
packages. The design has been optimized to provide
high isolation with minimal insertion loss for medium
and low power applications. On-chip circuitry allows
positive voltage control operation at very low DC cur-
rents with control inputs compatible with CMOS and
most TTL logic families. In the “OFF” state, RF1 and
RF2 are non-reflective.
Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System
Parameter
Insertion Loss
Isolation
Return Loss (On State)
RF1 & RF2
RF1 / RF2
RF1 / RF2
RF1 & RF2
Frequency
DC - 2.0 GHz
DC - 3.0 GHz
DC - 3.5 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 3.5 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.5 GHz
Min.
41
38/41
34/36
30
21
13
10
Typ.
0.5
0.6
0.7
45
44/45
42/45
40
25
22
17
Return Loss (Off State)
0.5 - 3.5 GHz
10 15
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power = 0 dBm Each Tone)
Switching Speed
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to
10/90% RF)
0.5 - 1.0 GHz
0.5 - 3.5 GHz
0.5 - 3.5 GHz
DC - 3.5 GHz
20 30
18 29
43 50
5
20
Max.
0.8
0.9
1.1
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
ns
ns
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]

1 page




HMC284AMS8G pdf
HMC284AMS8G / HMC284AMS8GE
v00.0612
SPDT Non-Reflective Switch
DC - 3.5 GHz
Typical Application Circuit
Notes:
1. Set A/B control to 0/+5V, Vdd = +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd = +5 Volts applied to the CMOS logic gates.
3. DC blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation.
4. Highest RF signal power capability is achieved with Vdd = +7V and A/B set to 0/+7V.
5. Back side paddle must be connected to RF ground.
6. A grounded coplanar waveguide PCB layout technique is recommended to achieve high isolation. The component side
ground plane between RFC/grounded paddle and RF1/RF2 should be continuous, see below. There should be a continuous
ground plane under component side layout.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
5
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]

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