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KDV302E fiches techniques PDF

KEC - SILICON EPITAXIAL PLANAR DIODE

Numéro de référence KDV302E
Description SILICON EPITAXIAL PLANAR DIODE
Fabricant KEC 
Logo KEC 





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KDV302E fiche technique
SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES
High Capacitance Ratio
Low Series Resistance
KDV302E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
E
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
VR
Tj
Storage Temperature Range
Tstg
RATING
32
125
-55 125
UNIT
V
2
D
1. ANODE
2. CATHODE
F
DIM
A
B
C
D
E
F
G
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
0.20+_ 0.10
ESC
Marking
Type Name
V5
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Current
Capacitance
Capacitance Ratio
IR
C1V
C2V
C25V
C28V
C1V/C28V
C1V/C2V
C25V/C28V
VR=32V
VR=1V, f=1MHz
VR=2V, f=1MHz
VR=25V, f=1MHz
VR=28V, f=1MHz
-
-
-
Series Resistance
rs VR=5V, f=470MHz
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
0.02
C(Min.)
(VR=1~28V)
2014. 3. 31
Revision No : 1
MIN.
-
56.0
-
-
2.45
21.6
1.25
1.07
-
TYP.
-
-
46.0
2.85
-
22.4
-
1.08
-
MAX.
10
62.0
-
-
2.80
-
-
-
1.15
UNIT
nA
pF
pF
pF
pF
-
-
-
1/2

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