DataSheetWiki


KDV350F fiches techniques PDF

KEC - SILICON EPITAXIAL PLANAR DIODE

Numéro de référence KDV350F
Description SILICON EPITAXIAL PLANAR DIODE
Fabricant KEC 
Logo KEC 





1 Page

No Preview Available !





KDV350F fiche technique
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C1V/C4V=2.8 (Min.)
Low Series Resistance. : rS=0.5 (max.)
Good C-V linearity.
KDV350F
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
21
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
Storage Temperature Range
VR
Tj
Tstg
RATING
15
150
-55 150
UNIT
V
B
A
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
MILLIMETERS
1.00+_ 0.05
0.80+0.10/-0.05
0.60+_ 0.05
0.30+_ 0.05
0.40 MAX
0.13+_ 0.05
Marking
Type Name
TFSC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
IR1
IR2
Capacitance
C1V
C4V
Capacitance Ratio
C1V/C4V
Series Resistance
rS
TEST CONDITION
VR=15V
VR=15V, Ta=60
VR=1V, f=1MHz
VR=4V, f=1MHz
-
VR=1V, f=470MHz
MIN.
-
-
15.5
5.0
2.8
-
TYP.
-
-
-
-
-
-
MAX.
10
100
17.0
6.0
-
0.5
UNIT
nA
pF
-
2004. 7. 14
Revision No : 0
1/2

PagesPages 2
Télécharger [ KDV350F ]


Fiche technique recommandé

No Description détaillée Fabricant
KDV350 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO) KEC(Korea Electronics)
KEC(Korea Electronics)
KDV350E SILICON EPITAXIAL PLANAR DIODE KEC
KEC
KDV350F SILICON EPITAXIAL PLANAR DIODE KEC
KEC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche