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Numéro de référence | KDV350F | ||
Description | SILICON EPITAXIAL PLANAR DIODE | ||
Fabricant | KEC | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C1V/C4V=2.8 (Min.)
Low Series Resistance. : rS=0.5 (max.)
Good C-V linearity.
KDV350F
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
21
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
Storage Temperature Range
VR
Tj
Tstg
RATING
15
150
-55 150
UNIT
V
B
A
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
MILLIMETERS
1.00+_ 0.05
0.80+0.10/-0.05
0.60+_ 0.05
0.30+_ 0.05
0.40 MAX
0.13+_ 0.05
Marking
Type Name
TFSC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
IR1
IR2
Capacitance
C1V
C4V
Capacitance Ratio
C1V/C4V
Series Resistance
rS
TEST CONDITION
VR=15V
VR=15V, Ta=60
VR=1V, f=1MHz
VR=4V, f=1MHz
-
VR=1V, f=470MHz
MIN.
-
-
15.5
5.0
2.8
-
TYP.
-
-
-
-
-
-
MAX.
10
100
17.0
6.0
-
0.5
UNIT
nA
pF
-
2004. 7. 14
Revision No : 0
1/2
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Pages | Pages 2 | ||
Télécharger | [ KDV350F ] |
No | Description détaillée | Fabricant |
KDV350 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO) | KEC(Korea Electronics) |
KDV350E | SILICON EPITAXIAL PLANAR DIODE | KEC |
KDV350F | SILICON EPITAXIAL PLANAR DIODE | KEC |
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