(PDF) KDV386S Datasheet - SILICON EPITAXIAL PLANAR DIODE

Número de pieza	KDV386S
Descripción	SILICON EPITAXIAL PLANAR DIODE
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =1.8 (Min.) Low Series Resistance. : rS=0.9 (Max.) Good C-V Linearity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 150 -55 150 UNIT V KDV386S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE E L BL 23 1 Q PP M 1. NC 2. ANODE 3. CATHODE DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93+_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX 3 21 SOT-23 Marking V BType Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current Capacitance Capacitance Ratio Series Resistance IR1 IR2 C1V C4V C1V/C4V rS TEST CONDITION VR=15V VR=15V, Ta=60 VR=1V, f=1MHz VR=4V, f=1MHz - VR=5V, f=470MHz MIN. - - 43.0 18.5 1.8 - TYP. - - - - - - MAX. 10 100 49.0 25.5 - 0.9 UNIT nA pF - 2007. 10. 31 Revision No : 0 1/2 1 page

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PDF KDV386S Data sheet ( Hoja de datos )