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PDF ZUMT591 Data sheet ( Hoja de datos )
| Número de pieza | ZUMT591 | |
| Descripción | PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT323 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
DRAFT SPECIFICATION ISSUE A – OCTOBER 94
FEATURES
* Extremely low saturation voltage
* 500mW power dissipation
* 1 Amp continuous collector current (IC)
APPLICATIONS
* Ideally suited for space / weight critical applications
ZUMT591
CE
B
SOT323
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
VALUE
-80
-60
-5
-2
-1
-200
500
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-80
V IC=-100µA, IE=-0
Collector-Emitter
Breakdown Voltage
VCEO(sus)
-60
V IC=-10mA*, IB=-0
Emitter-Base Breakdown V(BR)EBO
Voltage
-5
V IE=-100µA, IC=-0
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
ICES
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-100
-100
-100
-0.3
-0.6
-1.2
nA
nA
nA
V
V
V
VCB=-60V
VCE=-60V
VEB=-4V, IC=-0
IC=-500mA, IB=-50mA*
IC=-1A, IB=-100mA*
IC=-1A, IB=-100mA*
Base-Emitter
Turn On Voltage
VBE(on)
-1.0 V
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%
IC=-1A, VCE=-5V*
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet ZUMT591.PDF ] | |
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