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PDF IRFIZ24NPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFIZ24NPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
G
PD - 94808
IRFIZ24NPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.07Ω
ID = 14A
S
TO-220 FULLPAK
Max.
14
10
68
29
0.19
± 20
71
10
2.9
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
5.2
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/3/03
1 page  
IRFIZ24NPbF
15
10
5
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
D = 0.50
1 0.20
0.10
0.05
0.02
0.01
0.1
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFIZ24NPBF.PDF ] | |
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