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IRFHM8228PBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRFHM8228PBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRFHM8228PBF fiche technique
VDSS
VGS max
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
±20
5.2
8.7
9.0
25
V
V
m
nC
A
 
Applications
Control or synchronous MOSFET for synchronous buck converter
IRFHM8228PbF
HEXFET® Power MOSFET
 
S SG
S
D
D
D
D
D
PQFN 3.3X3.3 mm
Features
Low Thermal Resistance to PCB (<3.7°C/W)
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
 Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
 
IRFHM8228PbF
Package Type
 
PQFN 3.3 mm x 3.3 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8228TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 10
 
Max.
± 20
19
15
65
41
25
260
2.8
34
0.023
-55 to + 150
 
Units
V
A
W
W/°C
°C
1 www.irf.com © 2014 International Rectifier
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June 30, 2014

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