|
|
Numéro de référence | IRFHM3911TRPBF | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
VDSS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
100
115
17
11
V
m
nC
A
Applications
POE+ Power Sourcing Equipment Switch
IRFHM3911TRPbF
HEXFET® Power MOSFET
S SG
S
D
D
D
D
D
PQFN 3.3X3.3 mm
Features
Large Safe Operating Area (SOA)
Low Thermal Resistance to PCB
Low Profile (<1.05mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Increased Ruggedness
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM3911PbF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM3911TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
3.2
11
6.6
20
36
2.8
29
0.023
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 9
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
July 1, 2014
|
|||
Pages | Pages 9 | ||
Télécharger | [ IRFHM3911TRPBF ] |
No | Description détaillée | Fabricant |
IRFHM3911TRPBF | Power MOSFET ( Transistor ) | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |