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IRFHM3911TRPBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRFHM3911TRPBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRFHM3911TRPBF fiche technique
VDSS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
100
115
17
11
V
m
nC
A
Applications
 POE+ Power Sourcing Equipment Switch
IRFHM3911TRPbF
HEXFET® Power MOSFET
  
S SG
S
D
D
D
D
D
PQFN 3.3X3.3 mm
Features
Large Safe Operating Area (SOA)
Low Thermal Resistance to PCB
Low Profile (<1.05mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Increased Ruggedness
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
 Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
 
IRFHM3911PbF
Package Type
 
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM3911TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
 
Max.
± 20
3.2
11
6.6
20
36
2.8
29
0.023
-55 to + 150
 
Units
V
A
W
W/°C
°C
Notes through are on page 9
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July 1, 2014

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