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PDF IRFHE4250DPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFHE4250DPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDSS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TC = 25°C)
Q1
25
4.10
13
60
Q2
25
1.35
35
60
V
m
nC
A
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
FASTIRFET™
IRFHE4250DPbF
HEXFET® Power MOSFET
Features
Control and synchronous MOSFETs in one package
Low thermal resistance path to the PCB
Low thermal resistance path to the top
Low charge control MOSFET (13nC typical)
Low RDSON synchronous MOSFET (<1.35m)
Intrinsic schottky diode with low forward voltage on Q2
RoHS compliant, halogen-free
MSL2, industrial qualification
DUAL PQFN 6X6 mm
Benefits
Increased power density
Increased power density
Increased power density
results in Lower switching losses
Lower conduction losses
Lower switching losses
Environmentally friendlier
Increased reliability
Base part number
IRFHE4250DPbF
Package Type
Dual PQFN 6mm x 6mm
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRFHE4250DTRPbF
Absolute Maximum Ratings
VGS
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 70°C
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Notes through are on page 12
Q1 Max. Q2 Max.
± 16
86 303
69 243
Units
V
A
60
180
156
100
1.3
60
525
156
100
1.3
-55 to + 150
W
W/°C
°C
Q1 Max.
3.7
0.91
24
17
Q2 Max.
0.91
2.1
24
17
Units
°C/W
1 www.irf.com © 2013 International Rectifier
September 26, 2013
1 page  
10000
1000
Q1 - Control FET
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100000
10000
1000
IRFHE4250DPbF
Q2 - Synchronous FET
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
14.0
12.0
ID= 30A
10.0
VDS= 20V
VDS= 13V
8.0
6.0
4.0
2.0
0.0
0
5 10 15 20 25 30 35
QG, Total Gate Charge (nC)
40
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100 100µsec
1msec
10
Limited by
package
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
0.1
10msec
DC
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
5 www.irf.com © 2013 International Rectifier
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
14.0
12.0
ID= 30A
10.0
VDS= 20V
VDS= 13V
8.0
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60 70 80 90 100
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
10 Limited by package
1 Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.01 0.1
10msec
DC
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
September 26, 2013
5 Page 
Dual PQFN 6x6 Outline Package Details
IRFHE4250DPbF
For more information on board mounting, including footprint and stencil recommendation, please refer to
application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2013 International Rectifier
September 26, 2013
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRFHE4250DPBF.PDF ] | |
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