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IRFH8307TRPBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRFH8307TRPBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRFH8307TRPBF fiche technique
VDSS
RDS(on) max
(@ VGS = 10V)
Qg (typical)
Rg (typical)
30 V
1.3m
50 nC
1.3
 
ID
(@TC (Bottom) = 25°C)
100
A
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Battery Operated DC Motor Inverters
StrongIRFET™
IRFH8307TRPbF
HEXFET® Power MOSFET
 
PQFN 5X6 mm
Features
Low RDSon (<1.3m)
Low Thermal Resistance to PCB (<0.8°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
  
IRFH8307PbF
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH8307TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC (Bottom) = 25°C
ID @ TC (Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC (Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
 
Max.
± 20
42
33
100
100
400
3.6
156
0.029
-55 to + 150
 
Units
V
A 
W
W/°C
°C
Notes through are on page 9
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May 19, 2015

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