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PDF IRFH8303PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH8303PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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VDSS
RDS(on) max
Qg (typical)
RG (typical)
ID
(@TC (Bottom) = 25°C)
30
1.10
58
1.0
100
V
m
nC
Ω
A
Applications
Control MOSFET for synchronous buck converter
StrongIRFET™
IRFH8303PbF
HEXFET® Power MOSFET
PQFN 5 x 6 mm
Features
Low RDS(ON) (≤ 1.10 m)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg Tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better Thermal Dissipation
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
IRFH8303PbF
PQFN 5 mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH8303TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
43
280
177
100
400
3.7
156
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 9
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 17, 2015
1 page  
IRFH8303PbF
5.0
ID = 50A
4.0
3.0
2.0
TJ = 125°C
1.0
0.0
2
TJ = 25°C
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
1600
1400
1200
1000
ID
TOP
14A
25A
BOTTOM 50A
800
600
400
200
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
1000
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart = 25°C (Single Pulse)
10 Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 14. Single Avalanche Event: Pulse Current vs. Pulse Width
1.0E-02
5 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
March 17, 2015
5 Page | ||
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| PDF Descargar | [ Datasheet IRFH8303PBF.PDF ] | |
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