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PDF IRFH8201PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH8201PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
0.95
1.60
56
100
V
m
nC
A
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Battery Operated DC Motor Inverters
StrongIRFET™
IRFH8201PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features
Low RDSon (<0.95m)
Low Thermal Resistance to PCB (<0.8°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH8201PbF
Package Type
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH8201TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC (Bottom) = 25°C
ID @ TC (Bottom) = 100°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TC (Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
49
324
205
100
700
3.6
156
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 9
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March 11, 2015
1 page  
4.0
3.0
ID = 50A
2.0
TJ = 125°C
1.0
0.0
2
TJ = 25°C
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On– Resistance vs. Gate Voltage
1000
100
IRFH8201PbF
2000
1600
ID
TOP
15A
24A
BOTTOM 50A
1200
800
400
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Single Avalanche Event: Pulse Current vs. Pulse Width
1.0E-01
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March 11, 2015
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