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PDF IRFH7882PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH7882PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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VDSS
RDS(on) max
(@ VGS = 10V)
Qg (typical)
Rg (typical)
ID
(@TC (Bottom) = 25°C)
80
3.1
49
0.9
180
V
m
nC
A
FastIRFET™
IRFH7882PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications
Optimized for Secondary Side Synchronous Rectification
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
Hot Swap and Active O-Ring
BLDC Motor Drive
Features
Low RDS(ON) (< 3.1m)
Low Thermal Resistance to PCB (<0.64°C/W)
100% Rg Tested
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH7882PbF
Package Type
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7882TRPbF
Absolute Maximum Ratings
Parameter
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
± 20
26
180
114
290
4.0
195
0.03
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 8
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
May 5, 2015
1 page  
1000
100
IRFH7882PbF
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 12. Typical Avalanche Current vs. Pulse Width
1.0E-02
7.5
ID = 50A
6.0
4.5 TJ = 125°C
3.0
1.5
TJ = 25°C
0.0
4
6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 13. On–Resistance vs. Gate Voltage
3000
2500
2000
ID
TOP
12A
24A
BOTTOM 38A
1500
1000
500
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
May 5, 2015
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