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KEC - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Numéro de référence KF5N25F
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Fabricant KEC 
Logo KEC 





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KF5N25F fiche technique
SEMICONDUCTOR
TECHNICAL DATA
KF5N25F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converters
and switching mode power supplies.
FEATURES
VDSS= 250V, ID= 5A
Drain-Source ON Resistance :
RDS(ON)(MAX)=1.1 @VGS = 10V
Qg(typ) = 6nC
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
250
30
5*
3.1*
9*
55
2.5
4.5
26
0.2
150
-55 150
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance, Junction-to-
Ambient
RthJA
* : Drain current limited by maximum junction temperature.
4.8
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
A
E
C
LM
D
NN
R
H
123
1. GATE
2. DRAIN
3. SOURCE
*Single Gauge Lead Frame
TO-220IS (1)
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
PIN CONNECTION
D
G
S
2014. 12. 05
Revision No : 0
1/6

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