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PDF KF4N65F Data sheet ( Hoja de datos )
| Número de pieza | KF4N65F | |
| Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KF4N65P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=650V, ID=3.6A
Drain-Source ON Resistance :
RDS(ON)(Max)=2.5 @VGS=10V
Qg(typ.)= 12nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KF4N65P KF4N65F
Drain-Source Voltage
VDSS
650
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
3.6 3.6*
2.3 2.3*
8.4 8.4*
103
3.1
4.5
Drain Power
Dissipation
Tc=25
Derate above 25
PD
83.3
0.67
37.9
0.30
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.5
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
3.3
62.5
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
D
KF4N65P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KF4N65F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
* Single Gauge Lead Frame
TO-220IS (1)
G
2011. 6. 21
S
Revision No : 0
1/7
1 page  
KF4N65P/F
Fig12. Transient Thermal Response Curve
(KF4N65P)
101
100
Duty=0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3 10-2
TIME (sec)
PDM
t1
t2
- Duty Factor, D= t1/t2
10-1 100 101
Fig13. Transient Thermal Response Curve
(KF4N65F)
101
100 Duty=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3 10-2
TIME (sec)
PDM
t1
t2
- Duty Factor, D= t1/t2
10-1 100 101
2011. 6. 21
Revision No : 0
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KF4N65F.PDF ] | |
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