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PDF KF4N60I Data sheet ( Hoja de datos )
| Número de pieza | KF4N60I | |
| Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KF4N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 600V, ID= 3.2A
Drain-Source ON Resistance : RDS(ON)=2.5
Qg(typ) = 10nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
3.2
2.0
12*
130
3.3
4.5
59.5
0.48
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj 150
Tstg -55 150
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
2.1
110
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
D
KF4N60D
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF4N60I
AH
CJ
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MILLIMETERS
6.6 +_ 0.2
6.1 +_ 0.2
5.34 +_0.3
0.7 +_ 0.2
9.3 +_0.3
2.3+_ 0.2
0.76 +_ 0.1
2.3 +_ 0.1
0.5+_ 0.1
1.8 +_ 0.2
0.5 +_ 0.1
1.0 +_ 0.1
0.96 MAX
1.02 +_ 0.3
IPAK(1)
G
S
2013. 8. 05
Revision No : 0
1/6
1 page  
KF4N60D/I
Fig12. Gate Charge
Fast
Recovery
ID Diode
0.8 VDSS
1.0 mA
VGS
ID
VDS
VGS
10 V
Qgs
Qgd
Qg
Fig13. Single Pulsed Avalanche Energy
50V
25Ω
10 V VGS
BVDSS
L
IAS
VDS
VDD
1
EAS= 2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
Fig14. Resistive Load Switching
0.5 VDSS
25 Ω
10V VGS
tp
VDS
90%
RL
VDS
VGS 10%
td(on) tr
ton
td(off)
tf
toff
Q
VDS(t)
Time
2013. 8. 05
Revision No : 0
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet KF4N60I.PDF ] | |
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