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PDF KF1N60I Data sheet ( Hoja de datos )
| Número de pieza | KF1N60I | |
| Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KF1N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
VDSS= 600V, ID= 1A
RDS(ON)=10 (Max) @VGS = 10V
Qg(typ) = 4.0nC
EAS=45mJ
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
Drain Power
Dissipation
Tc=25
Derate above 25
PD
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
RATING
600
30
1.0
0.63
2.0
45
2
4.5
28
0.22
150
-55 150
4.5
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF1N60D
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF1N60I
AH
CJ
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 6.6+_0.2
B 6.1+_0.2
C 5.34 +_0.3
D 0.7+_0.2
E 9.3 +_0.3
F 2.3+_ 0.2
G 0.76+_0.1
H 2.3+_0.1
J 0.5+_ 0.1
K 1.8 +_ 0.2
L 0.5 +_ 0.1
M 1.0 +_ 0.1
N 0.96 MAX
P 1.02 +_ 0.3
PIN CONNECTION
(KF1N60D/I)
D
IPAK(1)
G
S
2010. 9. 27
Revision No : 0
1/6
1 page  
KF1N60D/I
2010. 9. 27
Revision No : 0
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet KF1N60I.PDF ] | |
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