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PDF IRF9383MPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF9383MPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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IRF9383MPbF
Applications
l Isolation Switch for Input Power or Battery Application
l High Side Switch for Inverter Applications
Features and Benefits
l Environmentaly Friendly Product
l RoHs Compliant Containing no Lead,
no Bromide and no Halogen
l Common-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
DirectFET® P-Channel Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
-30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
67nC 29nC 9.4nC 315nC 59nC -1.8V
G
D
S
SD
MX
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX
MT
MP
MC
Description
The IRF9383MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFET®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET®
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Orderable part number
IRF9383MTRPbF
IRF9383MTR1PbF
Package Type
DirectFET® Medium Can
DirectFET® Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
Note
"TR1" suffix EOL notice #264
Max.
-30
±20
-22
-17
-160
-180
Units
V
A
12
10 ID = -22A
8
6
4 TJ = 125°C
2 TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
-VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
14.0
12.0 ID= -18A VDS= -24V
10.0
8.0
VDS= -15V
VDS= -6.0V
6.0
4.0
2.0
0.0
0 20 40 60 80 100 120 140 160 180
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
June 2, 2015
1 page  
IRF9383MPbF
1000
100
TJ = 150°C
TJ = 25°C
TJ = -40°C
10
1
VGS = 0V
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
-VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
25
20
15
10
5
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
2500
2000
1500
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec 100μsec
10
10msec
1
DC
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.01
0.1
1
10 100
-VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
2.6
2.4
2.2
2.0
1.8 ID = -150μA
1.6
ID = -250μA
ID = -1.0mA
1.4 ID = -1.0A
1.2
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP -1.6A
-2.3A
BOTTOM -18A
1000
500
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
June 2, 2015
5 Page | ||
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