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NXP Semiconductors - NPN wideband silicon germanium RF transistor

Numéro de référence BFU910F
Description NPN wideband silicon germanium RF transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BFU910F fiche technique
BFU910F
NPN wideband silicon germanium RF transistor
Rev. 2 — 16 January 2015
Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium RF transistor for high speed, low noise applications in a plastic,
4-pin dual-emitter SOT343F package.
The BFU910F is suitable for small signal applications up to 20 GHz.
1.2 Features and benefits
Low noise high gain microwave transistor
Minimum noise figure (NFmin) = 0.65 dB at 12 GHz
Maximum stable gain 14.2 dB at 12 GHz
90 GHz fT SiGe technology
1.3 Applications
Ku band DBS Low-Noise blocks
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCE
collector-emitter voltage
RBE 1 M
IC collector current
Ptot total power dissipation
Tsp 90 C
hFE DC current gain
IC = 6 mA; VCE = 2 V
CCBS collector-base capacitance VCB = 2 V; f = 1 MHz
fT transition frequency
IC = 6 mA; VCE = 2 V
MSG maximum stable gain
IC = 6 mA; VCE = 2 V;
f = 12 GHz
NFmin minimum noise figure
IC = 6 mA; VCE = 2 V;
f = 12 GHz; S = opt
Gass
associated gain
IC = 6 mA; VCE = 2 V;
f = 12 GHz; S = opt
PL(1dB) output power at 1 dB
gain compression
IC = 10 mA; VCE = 2 V;
f = 12 GHz; ZS = ZL = 50
[1] Tsp is the temperature at the solder point of the emitter lead.
Min Typ Max Unit
- 2.0 3.0 V
- 10 15 mA
[1] -
-
300 mW
- 1900 -
- 35 - fF
- 90 - GHz
- 14.2 - dB
- 0.65 - dB
- 13.0 - dB
- 2 - dBm

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