|
|
Numéro de référence | BFU590Q | ||
Description | NPN wideband silicon RF transistor | ||
Fabricant | NXP Semiconductors | ||
Logo | |||
1 Page
BFU590Q
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic,
3-pin SOT89 package.
The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Medium power, high linearity, high breakdown voltage RF transistor
AEC-Q101 qualified
Maximum stable gain 11 dB at 900 MHz
PL(1dB) 22 dBm at 900 MHz
8 GHz fT silicon technology
1.3 Applications
Automotive applications
Broadband amplifiers
Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
Large signal amplifiers for ISM applications
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 90 C
hFE DC current gain
IC = 80 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 80 mA; VCE = 8 V; f = 900 MHz
Min Typ
--
--
--
--
- 80
[1] -
-
60 95
- 2.0
- 8.0
Max Unit
24 V
12 V
24 V
2V
200 mA
2000 mW
130
- pF
- GHz
|
|||
Pages | Pages 19 | ||
Télécharger | [ BFU590Q ] |
No | Description détaillée | Fabricant |
BFU590G | NPN wideband silicon RF transistor | NXP Semiconductors |
BFU590Q | NPN wideband silicon RF transistor | NXP Semiconductors |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |