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PDF BFU590G Data sheet ( Hoja de datos )
| Número de pieza | BFU590G | |
| Descripción | NPN wideband silicon RF transistor | |
| Fabricantes | NXP Semiconductors | |
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BFU590G
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic,
4-pin SOT223 package.
The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Medium power, high linearity, high breakdown voltage RF transistor
AEC-Q101 qualified
Maximum stable gain 13 dB at 900 MHz
PL(1dB) 21.5 dBm at 900 MHz
8.5 GHz fT silicon technology
1.3 Applications
Automotive applications
Broadband amplifiers
Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
Large signal amplifiers for ISM applications
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 90 C
hFE DC current gain
IC = 80 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 80 mA; VCE = 8 V; f = 900 MHz
Min Typ
--
--
--
--
- 80
[1] -
-
60 95
- 1.9
- 8.5
Max Unit
24 V
12 V
24 V
2V
200 mA
2000 mW
130
- pF
- GHz
1 page  
NXP Semiconductors
BFU590G
NPN wideband silicon RF transistor
Table 9. Characteristics …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
Gp(max) maximum power gain
s212
insertion power gain
PL(1dB) output power at 1 dB gain compression
Conditions
f = 433 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 900 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 1800 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 433 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 900 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 1800 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 433 MHz; VCE = 8 V; ZS = ZL = 50
IC = 50 mA
IC = 80 mA
f = 900 MHz; VCE = 8 V; ZS = ZL = 50
IC = 50 mA
IC = 80 mA
f = 1800 MHz; VCE = 8 V; ZS = ZL = 50
IC = 50 mA
IC = 80 mA
Min Typ
[1]
- 18.5
- 19.5
- 19.5
[1]
- 13.5
- 13
- 13
[1]
-8
-8
-8
- 16
- 17.5
- 17.5
- 10
- 11
- 11
- 4.5
- 5.5
- 5.5
- 20
- 22.5
- 19.5
- 21.5
- 18.5
- 21
Max Unit
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dBm
- dBm
- dBm
- dBm
- dBm
- dBm
BFU590G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 19
5 Page 
NXP Semiconductors
BFU590G
NPN wideband silicon RF transistor
VCE = 8 V; 40 MHz f 3 GHz.
(1) IC = 50 mA
(2) IC = 80 mA
Fig 16. Input reflection coefficient (s11); typical values
DDD
VCE = 8 V; 40 MHz f 3 GHz.
(1) IC = 50 mA
(2) IC = 80 mA
Fig 17. Output reflection coefficient (s22); typical values
BFU590G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 April 2014
DDD
© NXP Semiconductors N.V. 2014. All rights reserved.
11 of 19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet BFU590G.PDF ] | |
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