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NXP Semiconductors - NPN wideband silicon RF transistor

Numéro de référence BFU580G
Description NPN wideband silicon RF transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BFU580G fiche technique
BFU580G
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic,
4-pin SOT223 package.
The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high linearity, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
Maximum stable gain 15.5 dB at 900 MHz
11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise, high linearity amplifiers for ISM applications
Automotive applications (e.g., antenna amplifiers)
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 120 C
hFE DC current gain
IC = 30 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 30 mA; VCE = 8 V; f = 900 MHz
Min Typ
--
--
--
--
- 30
[1] -
-
60 95
- 1.1
- 11
Max Unit
24 V
12 V
24 V
2V
60 mA
1000 mW
130
- pF
- GHz

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