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Numéro de référence | IRFS350 | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
♦ Low RDS(ON): 0.254Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
IRFS350
BVDSS = 400 V
RDS(on) = 0.3Ω
ID = 11.5 A
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Value
400
11.5
7.3
68
±30
1134
11.5
9.2
4.0
92
0.74
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
1.35
40
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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Pages | Pages 7 | ||
Télécharger | [ IRFS350 ] |
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