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Numéro de référence | KTC3708U | ||
Description | EPITAXIAL PLANAR NPN TRANSISTOR | ||
Fabricant | KEC | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
High frequency amplifier transistor, RF switching application.
FEATURES
Very low on resistance (RON).
Low capacitance.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Storage Temperature Range
Tstg
RATING
12
6
3
50
100
150
-55 150
UNIT
V
V
V
mA
mW
KTC3708U
EPITAXIAL PLANAR NPN TRANSISTOR
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2 B 1.25+_ 0.15
13
C 0.90+_ 0.10
D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65
P H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
L
HM
0.70
0.42 +_0.10
NK
N
N 0.10 MIN
P 0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
Type Name
EA
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
On Resistance
SYMBOL
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Ron
TEST CONDITION
VCB=10V, IE=0
VEB=2V, IC=0
VCE=5V, IC=5mA
IC=10mA, IB=1mA
VCE=5V, IE=-10mA, f=200MHz
VCB=10V, IE=0A, f=1MHz
IB=3mA, VI=100mVrms, f=500kHz
MIN.
-
-
270
-
300
-
-
TYP.
-
-
-
-
800
1
2
MAX.
0.5
0.5
560
0.3
-
1.7
-
UNIT
A
A
V
MHz
pF
2008. 8. 29
Revision No : 1
1/3
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Pages | Pages 3 | ||
Télécharger | [ KTC3708U ] |
No | Description détaillée | Fabricant |
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