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PDF KTC3226 Data sheet ( Hoja de datos )
| Número de pieza | KTC3226 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
STROBO FLASH APPLICATION.
HIGH CURRENT APLICATION.
FEATURES
ᴌHigh DC Current Gain and Excellent hFE Linearity
: hFE(1)=140ᴕ600 (VCE=1V, IC=0.5A)
: hFE(2)=70(Min.), 200(Typ.) (VCE=1V, IC=2A).
ᴌLow Saturation Voltage
: VCE(sat)=0.5V(Max.) (IC=2A, IB=50mA).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
DC
Pulse (Note1)
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCES
VCEO
VEBO
IC
ICP
IE
PC
Tj
Storage Temperature Range
Tstg
Note 1 : Pulse Width⏊10ms, Duty Cycle⏊30%
RATING
30
30
10
6
2
5
-2
1
150
-55ᴕ150
UNIT
V
V
V
A
A
W
ᴱ
ᴱ
KTC3226
EPITAXIAL PLANAR NPN TRANSISTOR
BD
P
DEPTH:0.2
C
Q
K
FF
HH
M EM
123
HL
NN
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
S C 0.60 MAX
D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX
J 14.00+_ 0.50
H
K
L
0.35 MIN
0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.50
Q 0.10 MAX
R 12.50 +_ 0.50
S 1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
V(BR)EBO
hFE(1) (Note2)
hFE(2)
VCE(sat)
VBE
fT
VCB=30V, IE=0
VEB=6V, IC=0
IC=10mA, IB=0
IE=-1mA, IC=0
VCE=1V, IC=0.5A
VCE=1V, IC=2A
IC=2A, IB=50mA
VCE=1V, IC=2A
VCE=1V, IC=0.5A
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Note 2 : hFE(1) Classification A:140ᴕ240, B:200ᴕ330, C:300ᴕ450, D:420ᴕ600
MIN.
-
-
10
6
140
70
-
-
-
-
TYP.
-
-
-
-
-
200
0.2
0.86
150
27
MAX.
100
100
-
-
600
-
0.5
1.5
-
-
UNIT
nA
nA
V
V
V
V
MHz
pF
1994. 5. 11
Revision No : 0
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KTC3226.PDF ] | |
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