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Numéro de référence | IRF7425PBF-1 | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
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1 Page
VDS
RDS(on) max
(@VGS = -4.5V)
RDS(on) max
(@VGS = -2.5V)
Qg (typical)
ID
(@TA = 25°C)
-20 V
8.2
mΩ
13
87 nC
-15 A
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
IRF7425PbF-1
HEXFET® Power MOSFET
S1
S2
S3
G4
8
A
D
7D
6D
5D
Top View
SO-8
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF7425PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7425PbF-1
IRF7425TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-15
-12
-60
2.5
1.6
20
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 20, 2013
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Pages | Pages 9 | ||
Télécharger | [ IRF7425PBF-1 ] |
No | Description détaillée | Fabricant |
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