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Número de pieza | IRF7424PBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF7424PBF (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
VDSS
-30V
PD- 95343
IRF7424PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
13.5@VGS = -10V
22@VGS = -4.5V
ID
-11A
-8.8A
Description
S1
A
8D
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
S
2
7D
achieve the extremely low on-resistance per silicon S 3
area. This benefit provides the designer with an
extremely efficient device for use in battery and load G 4
6D
5D
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-11
-9.3
-47
2.5
1.6
20
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
1
10/04/04
1 page IRF7424PbF
12
10
8
6
4
2
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRF7424PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF7424PBF | Power MOSFET ( Transistor ) | International Rectifier |
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