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PDF IRF7416PBF-1 Data sheet ( Hoja de datos )

Número de pieza IRF7416PBF-1
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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VDS
RDS(on) max
(@VGS = -10V)
Qg (typical)
ID
(@TA = 25°C)
-30
0.020
61
-10
V
Ω
nC
A
IRF7416PbF-1
HEXFET® Power MOSFET
S1
S2
S3
G4
8
A
D
7D
6D
5D
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7416PbF-1
Package Type
SO-8
Standard Pack
Form
Tube/Bulk
Tape and Reel
Quantity
95
4000
Orderable Part Number
IRF7416PbF-1
IRF7416TRPbF-1
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
cPulsed Drain Current
PD @TA = 25°C
Power Dissipation
Linear Derating Factor
VGS
EAS
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
ePeak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
gRθJA Junction-to-Ambient
Max.
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
Max.
50
Units
A
W
W/°C
V
mJ
V/ns
°C
Units
°C/W
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 19, 2013

1 page




IRF7416PBF-1 pdf
IRF7416PbF-1
-10V
QGS
VG
QG
QGD
Charge
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2μF
.3μF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
100
VDS
VGS
RG
RD
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
t2
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 19, 2013

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