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PDF IRF7342TRPBF-1 Data sheet ( Hoja de datos )
| Número de pieza | IRF7342TRPBF-1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
RDS(on) max
(@VGS = -10V)
Qg (typical)
ID
(@TA = 25°C)
-55
0.105
26
-3.4
V
Ω
nC
A
IRF7342TRPbF-1
HEXFET® Power MOSFET
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7342PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7342TRPbF-1
Absolute Maximum Ratings
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
VGSM
EAS
dv/dt
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10μs
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-55
-3.4
-2.7
-27
2.0
1.3
0.016
± 20
30
114
5.0
-55 to + 150
Units
V
A
W
W/°C
V
V
V/ns
°C
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient
Typ.
–––
Max.
62.5
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 16, 2014
1 page  
IRF7342TRPbF-1
1200
960
720
VCGissS
=
=
0V,
Cgs
f = 1MHz
+ Cgd , Cds
SHORTED
CCrossss
=
=
CCgdds
+
Cgd
Ciss
480
240
0
1
Coss
Crss
10 100
--VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -3.1A
16
VVDDSS
=
=
-48V
-30V
VDS =-12V
12
8
4
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 16, 2014
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF7342TRPBF-1.PDF ] | |
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