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Numéro de référence | KTC5027 | ||
Description | TRIPLE DIFFUSED NPN TRANSISTOR | ||
Fabricant | KEC | ||
Logo | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING, WIDE SOA
KTC5027
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
DC
Pulse
IC
ICP
Base Current
Collector Power Dissipation
(Tc=25 )
Junction Temperature
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
1100
800
7
3
10
1.5
50
150
-55 150
UNIT
V
V
V
A
A
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaning Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Output Capacitance
Transition Frequency
ICBO
IEBO
VCEX(SUS)
VCE(sat)
VBE(sat)
hFE (1) (Note)
hFE (2)
BVCBO
BVCEO
BVEBO
Cob
fT
VCB=800V, IE=0
VEB=5V, IC=0
IC=1.5A, IB1=-IB2=0.3A
L=2mH, Clamped
IC=1.5A, IB=0.3A
IC=1.5A, IB=0.3A
VCE=5V, IC=0.2A
VCE=5V, IC=1A
IC=1mA, IE=0
IC=5mA, RBE=
IE=1mA, IC=0
VCB=10V, f=1MHz, IE=0
VCE=10V, IC=0.2A
Turn On Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
Note : hFE (1) Classification R:15 30, O:20 40
2008. 3. 26
Revision No : 1
MIN.
-
-
TYP.
-
-
MAX.
10
10
UNIT
A
A
800 - - V
-
-
15
8
1100
800
7
-
-
-
-
-
-
-
-
-
60
15
2V
1.5 V
40
-
-V
-V
-V
- pF
- MHz
- - 0.5
--3 S
- - 0.3
1/3
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Pages | Pages 3 | ||
Télécharger | [ KTC5027 ] |
No | Description détaillée | Fabricant |
KTC5027 | TRIPLE DIFFUSED NPN TRANSISTOR | KEC |
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