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Numéro de référence | KDR357 | ||
Description | SCHOTTKY BARRIER TYPE DIODE | ||
Fabricant | KEC | ||
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1 Page
SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : VF(3)=0.43V(Typ.)
Low Reverse Current : IR=5 (Max.)
Small Package : USC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
VRM
45 V
VR 40 V
IFM 200 mA
IO 100 mA
IFSM
1A
PD 200* mW
Tj 125
Storage Temperature Range
Tstg -55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
KDR357
SCHOTTKY BARRIER TYPE DIODE
B
1
2
D
MM
1. ANODE
2. CATHODE
G
H
J
C
I
DIM MILLIMETERS
A 2.50+_ 0.2
B 1.25+_ 0.05
C 0.90+_ 0.05
D 0.30 +_ 0.06
E 1.70 +_ 0.05
F 0.27 +_ 0.10
G 0.126+_ 0.03
H 0~0.1
I 1.0 MAX
J 0.15+_ 0.05
K 0.4
L 2 +4/-2
M 4~6
USC
Marking
Type Name
UL
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
VF(1)
Forward Voltage
VF(2)
VF(3)
Reverse Current
IR
Total Capacitance
CT
TEST CONDITION
IF=1mA
IF=10mA
IF=100mA
VR=40V
VR=0V, f=1MHz
MIN.
-
-
-
-
-
TYP.
0.24
0.31
0.43
-
30
MAX.
-
-
0.55
5
-
UNIT
V
A
pF
2014. 3. 31
Revision No : 6
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Pages | Pages 2 | ||
Télécharger | [ KDR357 ] |
No | Description détaillée | Fabricant |
KDR357 | SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) | KEC(Korea Electronics) |
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