(PDF) BAS23W Datasheet - SILICON EPITAXIAL PLANAR DIODE

Número de pieza	BAS23W
Descripción	SILICON EPITAXIAL PLANAR DIODE
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA High Voltage Switching. FEATURES High Reliability. Small surface mounting type (USM). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage VRM VR 300 250 Continuous Forward Current IF 200 Surge Current (10mS) IFSM 2 Power Dissipation PD 200 * Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On FR-5 Board (25.4 19.05 1.57mm) UNIT V V mA A mW BAS23W SILICON EPITAXIAL PLANAR DIODE E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 L HM 0.70 0.42 +_0.10 NK N N 0.10 MIN P 0.1 MAX 1. CATHODE 1 2. ANODE 2 3. ANODE 1/ CATHODE 2 3 21 USM Marking Type Name JE Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time VF IR(1) IR(2) CT trr TEST CONDITION IF=150mA VR=250V VR=300V VR=0V, f=1MHz IR=30mA, IF=30mA MIN. - - - - - TYP. - - - - - MAX. 1.25 0.2 100 3 100 UNIT A pF nS 2009. 1. 23 Revision No : 2 1/2 1 page

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