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WNM4001 fiches techniques PDF

Will Semiconductor - Small Signal N-Channel MOSFET

Numéro de référence WNM4001
Description Small Signal N-Channel MOSFET
Fabricant Will Semiconductor 
Logo Will Semiconductor 





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WNM4001 fiche technique
WNM4001
Small Signal N-Channel, 20V, 0.5A, MOSFET
V(BR)DSS
20 V
RDS(on) Max.
0.7ȍ@ 4.5V
0.85ȍ@ 2.5V
1.25ȍ@ 1.8V
ID MAX
0.5A
0.3A
0.1A
Descriptions
The WNM4001 is the N-Channel enhancement
MOS Field Effect Transistor, uses advanced trench
technology and design to provide excellent RDS(ON) with
low gate charge. This device is suitable for use in
small signal switch. Standard product WNM4001 is
Pb-free.
Features
z Trench N-Channel
z Supper high density cell design for extremely low
Rds(on)
z Exceptional ON resistance and maximum DC
current capability
z Small package design with SOT-523
WNM4001
Http://www.willsemi.com
Top
D
3
12
GS
SOT-523
D
3
12
GS
Pin Configuration
3
N3 *
12
N3 = Device Code
* = Month
Marking
Applications
z Driver: Relays, Solenoids, Lamps, Hammers
z Power supply converters circuit
z Load/Power Switching for potable device
Order Information
Device
Package
WNM4001-3/TR SOT-523
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
1
Nov, 2011 - Rev. 1.3

PagesPages 6
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