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Infineon - Silicon Tuning Diodes

Numéro de référence BBY66-02V
Description Silicon Tuning Diodes
Fabricant Infineon 
Logo Infineon 





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BBY66-02V fiche technique
Silicon Tuning Diodes
High capacitance ratio
High Q hyperabrupt tuning diode
Low series resistance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
Very low capacitance spread
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BBY66...
BBY66-02V

BBY66-05
BBY66-05W
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Type
BBY66-02V
BBY66-05
BBY66-05W
Package
SC79
SOT23
SOT323
Configuration
single
common cathode
common cathode
**For differences see next page Capacitance groups
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
Forward current
IF
Operating temperature range
Top
Storage temperature
Tstg
1Pb-containing package may be available upon special request
LS(nH)
0.6
1.8
1.4
Marking
h
O1s / O2s**
OBs
Value
12
50
-55 ... 150
-55 ... 150
Unit
V
mA
°C
1 2007-04-20

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