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Numéro de référence | BBY66-02V | ||
Description | Silicon Tuning Diodes | ||
Fabricant | Infineon | ||
Logo | |||
1 Page
Silicon Tuning Diodes
• High capacitance ratio
• High Q hyperabrupt tuning diode
• Low series resistance
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• Very low capacitance spread
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BBY66...
BBY66-02V
BBY66-05
BBY66-05W
!
, ,
Type
BBY66-02V
BBY66-05
BBY66-05W
Package
SC79
SOT23
SOT323
Configuration
single
common cathode
common cathode
**For differences see next page Capacitance groups
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
Forward current
IF
Operating temperature range
Top
Storage temperature
Tstg
1Pb-containing package may be available upon special request
LS(nH)
0.6
1.8
1.4
Marking
h
O1s / O2s**
OBs
Value
12
50
-55 ... 150
-55 ... 150
Unit
V
mA
°C
1 2007-04-20
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Pages | Pages 8 | ||
Télécharger | [ BBY66-02V ] |
No | Description détaillée | Fabricant |
BBY66-02V | Silicon Tuning Diodes | Infineon |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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