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Infineon - Silicon Tuning Diode

Numéro de référence BBY65-02V
Description Silicon Tuning Diode
Fabricant Infineon 
Logo Infineon 





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BBY65-02V fiche technique
Silicon Tuning Diode
High Q hyperabrupt tuning diode
Very low capacitance spread
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For low frequency control elements
such as TCXOS and VCXOS
High capacitance ratio and good C-V linearity
Pb-free (RoHS compliant) package
BBY65...
BBY65-02V

Type
BBY65-02V
Package
SC79
Configuration
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
VR
IF
Top
Tstg
LS(nH) Marking
0.6 F
Value
15
50
-55 ... 150
-55 ... 150
Unit
V
mA
°C
1 2011-06-15

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